Samsung Electronics announced the industry's first 1TB eUFS 2.1 (embedded Universal Flash Storage). The chip has already entered mass production so we can expect the next-generation premium smartphones to feature it and the Galaxy S10+ will likely to be the first one.
The new 1TB eUFS chip is just as big as the previous 512GB chip (11.5 x 13mm) while holding double the storage capacity by combining 16 stacked V-NAND flash memory layers and a newly developed controller. But Samsung was able to make substantial speed gains as well.
The new chip boasts sequential read speeds of up to 1000 MB/s and sequential write speed of 260 MB/s. For the record, a standard 2.5-inch SATA SSD caps at around 540 MB/s read speeds, so this is mighty impressive. Compared to the previous generation of 512GB storage, the 1TB chip's random read speeds have increased by 38%.
Here's a small table comparing different internal memory solutions and their performance:
| Memory | Sequential Read | Sequential Write | Random Read | Random Write |
| 1TB eUFS 2.1 | 1000 MB/s | 260 MB/s | 58,000 IOPS | 50,000 IOPS |
| 512GB eUFS 2.1 | 860 MB/s | 255 MB/s | 42,000 IOPS | 40.000 IOPS |
| 256GB UFS Card | 530 MB/s | 170 MB/s | 40,0000 IOPS | 35.000 IOPS |
| 256 eUFS 2.0 | 850 MB/s | 260 MB/s | 45,000 IOPS | 40,000 IOPS |
| 128GB eUFS 2.0 | 300 MB/s | 150 MB/s | 19,000 IOPS | 14,000 IOPS |
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